cvd d silicon 化学汽相淀积硅
The invention provides a method for manufacturing CVD silicon oxide capable of improving forming quality.
本发明提供了一种可提高成形质量的CVD氧化硅制造方法。
The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.
采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
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